JPH0571145B2 - - Google Patents

Info

Publication number
JPH0571145B2
JPH0571145B2 JP60057815A JP5781585A JPH0571145B2 JP H0571145 B2 JPH0571145 B2 JP H0571145B2 JP 60057815 A JP60057815 A JP 60057815A JP 5781585 A JP5781585 A JP 5781585A JP H0571145 B2 JPH0571145 B2 JP H0571145B2
Authority
JP
Japan
Prior art keywords
region
output
mosfet
gate electrode
protection
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Lifetime
Application number
JP60057815A
Other languages
English (en)
Japanese (ja)
Other versions
JPS61216477A (ja
Inventor
Yoshitake Tsuruoka
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
NEC Corp
Original Assignee
Nippon Electric Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Nippon Electric Co Ltd filed Critical Nippon Electric Co Ltd
Priority to JP60057815A priority Critical patent/JPS61216477A/ja
Publication of JPS61216477A publication Critical patent/JPS61216477A/ja
Publication of JPH0571145B2 publication Critical patent/JPH0571145B2/ja
Granted legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D89/00—Aspects of integrated devices not covered by groups H10D84/00 - H10D88/00
    • H10D89/60—Integrated devices comprising arrangements for electrical or thermal protection, e.g. protection circuits against electrostatic discharge [ESD]
    • H10D89/601—Integrated devices comprising arrangements for electrical or thermal protection, e.g. protection circuits against electrostatic discharge [ESD] for devices having insulated gate electrodes, e.g. for IGFETs or IGBTs
    • H10D89/811—Integrated devices comprising arrangements for electrical or thermal protection, e.g. protection circuits against electrostatic discharge [ESD] for devices having insulated gate electrodes, e.g. for IGFETs or IGBTs using FETs as protective elements

Landscapes

  • Metal-Oxide And Bipolar Metal-Oxide Semiconductor Integrated Circuits (AREA)
  • Protection Of Static Devices (AREA)
JP60057815A 1985-03-22 1985-03-22 半導体装置 Granted JPS61216477A (ja)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP60057815A JPS61216477A (ja) 1985-03-22 1985-03-22 半導体装置

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP60057815A JPS61216477A (ja) 1985-03-22 1985-03-22 半導体装置

Publications (2)

Publication Number Publication Date
JPS61216477A JPS61216477A (ja) 1986-09-26
JPH0571145B2 true JPH0571145B2 (en]) 1993-10-06

Family

ID=13066412

Family Applications (1)

Application Number Title Priority Date Filing Date
JP60057815A Granted JPS61216477A (ja) 1985-03-22 1985-03-22 半導体装置

Country Status (1)

Country Link
JP (1) JPS61216477A (en])

Families Citing this family (10)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5060048A (en) * 1986-10-22 1991-10-22 Siemens Aktiengesellschaft & Semikron GmbH Semiconductor component having at least one power mosfet
KR940004449B1 (ko) * 1990-03-02 1994-05-25 가부시키가이샤 도시바 반도체장치
JP3237110B2 (ja) * 1998-03-24 2001-12-10 日本電気株式会社 半導体装置
JP2000357695A (ja) 1999-06-16 2000-12-26 Nec Corp 半導体装置、半導体集積回路及び半導体装置の製造方法
JP2001144097A (ja) 1999-11-11 2001-05-25 Nec Corp 半導体装置
US6934136B2 (en) * 2002-04-24 2005-08-23 Texas Instrument Incorporated ESD protection of noise decoupling capacitors
JP2004304136A (ja) * 2003-04-01 2004-10-28 Oki Electric Ind Co Ltd 半導体装置
JP6099985B2 (ja) * 2013-01-18 2017-03-22 エスアイアイ・セミコンダクタ株式会社 半導体装置
JP6099986B2 (ja) * 2013-01-18 2017-03-22 エスアイアイ・セミコンダクタ株式会社 半導体装置
JP2016021530A (ja) * 2014-07-15 2016-02-04 ルネサスエレクトロニクス株式会社 半導体装置

Also Published As

Publication number Publication date
JPS61216477A (ja) 1986-09-26

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Legal Events

Date Code Title Description
EXPY Cancellation because of completion of term